Reduced noise dynamic comparator for a successive approximation register analog-to-digital converter

ABSTRACT

A comparator circuit includes a first transistor configured to receive a first input and a second transistor configured to receive a second input. The comparator circuit further includes a third transistor coupled to a terminal of each of the first and second transistors. The third transistor is configured to be controlled by a first control signal. A gate of a fifth transistor is coupled to a terminal of a fourth transistor at a first node and a gate of the fourth transistor is coupled to a terminal of the fifth transistor at a second node. A sixth transistor is coupled between the first and fourth transistors. A seventh transistor is coupled between the second and fifth transistors. A gate of the sixth transistor and a gate of the seventh transistor are coupled together at a fixed voltage level.

CROSS REFERENCE TO RELATED APPLICATION(S)

This continuation application claims priority to U.S. patent applicationSer. No. 16/555,265, filed Aug. 29, 2019, which claims priority to U.S.patent application Ser. No. 15/837,040, filed Dec. 11, 2017 (now U.S.Pat. No. 10,447,290), both of which are incorporated herein by referencein their entirety.

BACKGROUND

Comparators are used in a variety of applications. For example, asuccessive approximation register digital-to-analog converter (SAR ADC)uses a comparator to compare an input voltage to be converted to digitalform to a programmable reference voltage. Zero static power SAR ADCs canbe used for a wide range of conversion throughput rates. Powerconsumption of the ADC scales linearly with throughput. Some comparatorsin SAR ADCs may include a pre-amplifier to boost the input signal levelbefore providing the input signal to a latch, but pre-amplifiers consumepower regardless of the throughput of the ADC. Dynamic comparators mayintroduce a significantly high level of kickback noise. Thermal noisemay be present in an ADC which may necessitate a design trade-offbetween conversion speed and noise. That is, one ADC may be faster thananother, but the faster ADC may be characterized by higher levels ofthermal noise. Thermal noise of the dynamic comparator causesdegradation in the signal-to-noise ratio (SNR), and kickback noiseintroduces a second or third order non-linearity in the input-to-outputconversion relationship.

SUMMARY

In one example, a comparator circuit includes eight transistors. A firsttransistor is configured to receive a first and a second transistor isconfigured to receive a second input. A third transistor is coupled to aterminal of each of the first and second transistors. The thirdtransistor is configured to be controlled by a first control signal. Afourth transistor is coupled to the first transistor at a first node. Afifth transistor is coupled to the second transistor at a second node. Agate of the fifth transistor is coupled to the first node and a gate ofthe fourth transistor is coupled to the second node. A sixth transistoris coupled to the first node. A gate of the sixth transistor is coupledto the second node. A seventh transistor is coupled to the second node.A gate of the seventh transistor is coupled to the first node. An eighthtransistor is coupled to a terminal of each of the sixth and seventhtransistors. The eighth transistor is configured to be controlled by asecond control signal having an edge that is delayed from acorresponding edge of the first control signal.

In another example, a comparator circuit includes a first transistorconfigured to receive a first input and a second transistor configuredto receive a second input. The comparator circuit further includes athird transistor coupled to a terminal of each of the first and secondtransistors. The third transistor is configured to be controlled by afirst control signal. A gate of a fifth transistor is coupled to aterminal of a fourth transistor at a first node and a gate of the fourthtransistor is coupled to a terminal of the fifth transistor at a secondnode. A sixth transistor is coupled between the first and fourthtransistors. A seventh transistor is coupled between the second andfifth transistors. A gate of the sixth transistor and a gate of theseventh transistor are coupled together at a fixed voltage level.

In yet another example, a comparator circuit includes a first transistorconfigured to receive a first input and a second transistor configuredto receive a second input. A third transistor is coupled to a terminalof each of the first and second transistors. The third transistor isconfigured to be controlled by a first control signal. A transistorswitch is coupled between drains of the first and second transistors. Afourth transistor including a gate and a drain is included in thecomparator circuit as well. A fifth transistor also includes a gate anda drain. The gate of the fifth transistor is coupled to the drain of thefourth transistor and the gate of the fourth transistor is coupled tothe drain of the fifth transistor. A sixth transistor is included andcomprises a drain and a gate. The drains of the fourth and sixthtransistors are coupled together. A gate of the sixth transistor iscoupled to the drain of the fifth transistor. A seventh transistorincludes a drain and a gate, and the drains of the fifth and seventhtransistors are coupled together. A gate of the seventh transistor iscoupled to the drain of the fourth transistor. An eighth transistor iscoupled to a terminal of each of the sixth and seventh transistors. Theeighth transistor is configured to be controlled by a second controlsignal having an edge that is delayed from a corresponding edge of thefirst control signal.

BRIEF DESCRIPTION OF THE DRAWINGS

For a detailed description of various examples, reference will now bemade to the accompanying drawings in which:

FIG. 1 illustrates an example of a comparator which reduces the effectsof thermal noise in accordance with an illustrative embodiment.

FIG. 2 shows a timing diagram of the comparator of FIG. 1.

FIG. 3 illustrates an example of a comparator which reduces the effectsof kickback and thermal noise in accordance with an illustrativeembodiment.

FIG. 4 shows a timing diagram of the comparator of FIG. 3.

DETAILED DESCRIPTION

FIG. 1 shows an example of a comparator circuit 100. In this example,the comparator circuit comprises transistors MP0, MP1, MP2, MP3, MP4,MP5, MN0, and MN1, transistor switches SW1 and SW2, capacitors C1 andC2, OR gate 102, delay 104, control signal generator 110, and latch 120.The inputs being compared together by the comparator circuit 100 isshown as Vinp and Vinm and the output of the comparator is representedas Outp and Outm. Outp is high and Outm is low if Vinp is larger thanVinm, and Outp is low and Outm is high if Vinp is smaller than Vinm.Using a control signal 111 from the control signal generator 110, thelatch 120 latches Outp and Outm as output signals Voutp and Voutm,respectively.

In the example of FIG. 1, MP0, MP1, MP2, MP3, MP4, and MP5 comprisep-type metal oxide semiconductor field effect transistors (MOSFETs) andMN0 and MN1 comprise n-type MOSFETS. The doping type of the transistorscan be different from that shown in FIG. 1 in other embodiments. AsMOSFETs, the transistors have a gate, a drain, and a source (sometimesreferred to as terminals herein). MP1 is configured to receive inputVinp, and MP2 is configured to receive input Vinm. The sources of MP1and

MP2 are coupled together as shown and to the drain of MP0. The source ofMP0 is coupled to a supply voltage AVDD. The gate of MP0 is controlledby a control signal designated as rstb in FIG. 1. Rstb is generated bythe control signal generator 110 based on an input clock signal (CLK).

The drain of MN0 is coupled to the drain of MP1 thereby defining a node105. Similarly, the drain of MN1 is coupled to the drain of MP2 therebydefining a node 115. The gate of MN1 is coupled to node 105 and the gateof MN0 is coupled to node 115. Capacitor C1 is coupled in parallelacross MN0 (i.e., between MN0's drain and source terminals). Transistorswitch SW1 is coupled in parallel to C1 as well. When SW1 is closed(e.g., turned on and conducting current), node 105 and thus Outm ispulled low to approximately the same potential as AVSS. Similarly,capacitor C2 is coupled in parallel across MN1 (i.e., between MN1'sdrain and source terminals). Transistor switch SW2 is coupled inparallel to C2. When SW2 is closed, node 115 and thus Outp is pulled lowto approximately the same potential as AVSS. SW1 and SW2 are alsocontrolled by rstb. Thus, when rstb is a logic high, both SW1 and SW2close resetting the output signals Outp and Outm to a logic low level.With rstb low, Outp and Outm are caused to transition high or lowdepending on the relative voltage levels of Vinp and Vinm.

If Vinp is larger than Vinm, and with rstb low and thus MP0 on, currentflows through MP0 and through each of MP1 and MP2, but more currentflows through MP2 than MP1 if Vinp is larger than Vinm or more currentflows through MP1 than MP2 if Vinm is larger than Vinp. In the case inwhich more current flows through MP2 than MP1 (Vinp is larger thanVinm), the voltage on node 115 begins to rise faster than the voltage onnode 105. Because node 115 is coupled to the gate of MN0, MN0 begins toturn on sooner than MN1. The cross-coupled configuration of MN0 and MN1(drain of MN1 coupled to gate of MN0, and drain of MN0 coupled to gateof MN1), provides positive feedback to reinforce the voltage on node 115(i.e., Outp) being larger than the voltage on node 105 (i.e., Outm). Thecircuit works similarly when Vinm is greater than Vinp generating Outmto be a larger voltage than Outp.

MP4 and MP5 are also provided to accelerate the regeneration of thevoltage on nodes 105 and 115. MP4 and MP5 are sized appropriately toensure that a sufficiently high regenerative transconductance whenrstb_d goes low. The sources of MP4 and MP5 are coupled together and tothe drain of MP3. The source of MP3 is coupled to AVDD. A control signallabeled as rstb_d is provided to the gate of MP3 and determines whetherMP3 is on or off. The drain of MP4 is coupled to node 105 and to thegate of MP5. Similarly, the drain of MP5 is coupled to node 115 and tothe gate of MP4. Transistors MP4 and MP5 work in concert with MN0 andMN1 to reinforce the voltages on nodes 105 and 115. For example, if Vinpis greater than Vinm, the voltage on node 115 becomes higher than onnode 105 as discussed above. With the voltage on node 115 at an elevatedlevel compared to the voltage on node 105, MP5 begins to turn on fasterthan MP4 thereby permitting additional current to flow from AVDD,through MP3 and MP5 to node 115, and thus to further reinforce MN0 beingon.

The clock signal CLK is provided to the control signal generator 110which generates the control signal 111 for the latch, and rstb as well.The delay 104 receives rstb and delays it by a predetermined amount oftime. The amount of delay is application specific and may depend on thedesired speed of the comparator circuit 100. The output of delay 104 andrstb are provided as inputs to OR gate 102. The output of OR gate 102 ishigh when either rstb is high or the output of delay 104 is high. Theoutput of the OR gate is the rstb_d control signal for the gate of MP3.The relative timing between CLK, rstb, and rstb_d is shown in FIG. 2 anddiscussed below.

Referring now to FIG. 2, CLK is illustrated with a falling edge at 202and a rising edge at 204. The control signal generator 110 generatesrstb to have a falling edge 224 generally coincident with the fallingedge of CLK. With CLK and thus rstb high, switches SW1 and SW2 areclosed thereby resetting the comparator circuit 100 (Outm and Outp areboth forced low). With rstb being high, rstb_d from OR gate 102 also ishigh. Upon rstb transitioning to a logic low level as exemplified at205, MP0 turns on and SW1 and SW2 turn off. Outm and Outp begin to riseas noted above as charge begins to accumulate on the gates of MN0 andMN1 due to current flowing through MP2 and MP1, respectively. Once rstbbecomes low, one input to the OR gate is low. The other OR gate inputfrom the delay 104 remains high for a period of time equal to the timedelay implemented by delay 104. The time delay is preconfigured in thedelay 104. Once the output of the delay 104 also becomes low, the outputof the OR gate 102, which is rstb_d becomes low (as shown at 208),thereby turning on MP3. With MP3 on, additional current flows to one orthe other of MN0 and MN1 to reinforce whichever of MN0 and MN1 is beingturned on faster due to the relative voltage levels of Vinp and Vinm asdescribed above.

The dashed line 209 a depicts the continued rate of change of Outp andthe dashed line 210 a depicts the continued rate of change of Outm.Dashed lines 209 b and 210 b depict what would have been the continuedrate of change of Outp and Outm, respectively, absent the acceleratedaffect from transistors MP4 and MP5. As can be seen, the comparatorgenerates the Outp and Outm final values at a faster rate and soonerusing transistors MP4 and MP5. Once Outp and Outm reach their finalvalues, the control signal generator 110 asserts rstb high as shown bydashed rising edge 212 a. With rstb high, rstb_d also is forced high byOR gate 102 which causes MP3 to turn off. Further, with rstb high, MP0is turned off and switches SW1 an SW2 are closed thereby resetting thecomparator circuit 100. The comparator circuit 100 resets sooner thanwould have been the case had rstb been forced high at 212 b which wouldhave been the case absent the accelerated affect from transistors MP4and MP5.

Thermal noise of the comparator is inversely proportional to the timedelay. Thermal noise can be reduced by slowing down the initial phase ofintegration of node 105, 115 (common mode rising time of 205, 206) butthis will slow down the regeneration phase resulting in a slow responsetime for the comparator. The additional circuit comprising MP3, MP4, andMP5 accelerates the regeneration phase without affecting the initialintegration time. Thus, for a constant delay more time can be allocatedfor common mode integration phase resulting in a better thermal noiseperformance of the comparator.

FIG. 3 shows a comparator circuit 300 in accordance with anotherembodiment. Comparator circuit 300 has some similarities to comparatorcircuit 100 of FIG. 1. For example, as for comparator circuit 100,comparator circuit 300 includes transistors MP1 MP2, MP3, MP4, MP5, MN0,and MN1, capacitors C1 and C2, transistor switches SW1 and SW2 coupledtogether as described above with regard to comparator 100.

Comparator circuit 300 also includes cascode transistors MP0 c and MP3Cas shown to reduce the kick-back noise. MP0 c reduces the transientglitch (step change) at the source of transistors MP1 and MP2 at everyfalling edge of CLK, whereas MP3 c performs the same function for MP4and MP5. Any transient glitches at the sources of MP1 and MP2 couple toVinp and Vinm through parasitic capacitance between the source and gateof MP1 and MP2 which can potentially override the actual differentialinput resulting possibly in a wrong decision of the comparator. Thiseffect is called kickback noise for a dynamic comparator.

Further, comparator circuit 300 includes cascode transistor MP1 ccoupled between MP1 and MN0. The connection between MP1 c and MN0 islabeled as node 305 and provides the output signal Outm. MP1 c in thisexample is a p-type MOSFET. Similarly, comparator circuit 300 includescascode transistor MP2 c coupled between MP2 and MN1. The connectionbetween MP2 c and MN1 is labeled as node 315 and provides the outputsignal Outp. MP2 c in this example also is a p-type MOSFET. A transistorswitch SW3 couples together the drains of MP1 and MP2, and the sourcesof cascode transistors MP1 c and MP2 c. MP1 c reduces the transientvoltage at the drain of MP1 at the fall edge of CLK. This will reducethe kickback to Vinp through the drain to gate capacitance of MP1. MP2 chelps to reduce the kickback through MP2 in a similar manner.

In the example of FIG. 3, a clock signal (CLK) is provided to a controlsignal generator 310, which generates additional control signals Clk_d,Clk_d1, and Clk_2. The clock signal CLK is used to control the state ofMP0, while Clk_d controls the state of switches SW1-SW3. Control signalClk_d1 controls the state of MP3 and Clk_2 controls the latch 120, whichlatches the output signals Outp and Outm as Voutp and Voutm,respectively.

FIG. 4 shows the timing diagram for the relevant control signals CLK,Clk_d, Clk_d1, and Clk_2. Upon CLK transitioning to a logic low level at350, the control signal generator 310 asserts Clk_d low as well butafter a time delay designated as TD1 in FIG. 4. TD1 may be preconfiguredusing a delay circuit within the control signal generator 310. Thelength of TD1 provides sufficient time for kickback noise to reduce to asufficiently low level. While Clk_d is high, SW1-SW3 are all closed.Once Clk_d becomes low, SW1-SW3 open and the comparator circuit 300 isable to begin to generate the comparison decision (whether Outp is highand Outm is low, or vice versa) during time period T2. Outp and Outm arefinalized at 355, followed by a time period T3 before the next cyclestarts in which a capacitive digital-to-analog converter (CDAC) hassufficient time to settle before the next comparator generation within aSAR ADC.

Certain terms have been used throughout this description and claims torefer to particular system components. As one skilled in the art willappreciate, different parties may refer to a component by differentnames. This document does not intend to distinguish between componentsthat differ in name but not function. In this disclosure and claims, theterms “including” and “comprising” are used in an open-ended fashion,and thus should be interpreted to mean “including, but not limited to .. . .” Also, the term “couple” or “couples” is intended to mean eitheran indirect or direct wired or wireless connection. Thus, if a firstdevice couples to a second device, that connection may be through adirect connection or through an indirect connection via other devicesand connections. The recitation “based on” is intended to mean “based atleast in part on.” Therefore, if X is based on Y, X may be a function ofY and any number of other factors.

The above discussion is meant to be illustrative of the principles andvarious embodiments of the present invention. Numerous variations andmodifications will become apparent to those skilled in the art once theabove disclosure is fully appreciated. It is intended that the followingclaims be interpreted to embrace all such variations and modifications.

What is claimed is:
 1. A comparator circuit, comprising: a firsttransistor configured to receive a first input; a second transistorconfigured to receive a second input; a third transistor coupled to aterminal of each of the first and second transistors, wherein the thirdtransistor is configured to be controlled by a first control signal; afourth transistor; a fifth transistor, wherein a gate of the fifthtransistor is coupled to a terminal of the fourth transistor at a firstnode and a gate of the fourth transistor is coupled to a terminal of thefifth transistor at a second node; and a sixth transistor coupledbetween the first and fourth transistors; and a seventh transistorcoupled between the second and fifth transistors; wherein a gate of thesixth transistor and a gate of the seventh transistor are coupledtogether at a fixed voltage level.
 2. The comparator circuit of claim 1,wherein the first, second, sixth and seventh transistors comprise p-typemetal oxide semiconductor field effect transistors.
 3. The comparatorcircuit of claim 1, further comprising: an eighth transistor coupled tothe first node, wherein a gate of the eighth transistor is coupled tothe second node; and a ninth transistor coupled to the second node,wherein a gate of the ninth transistor is coupled to the first node. 4.The comparator circuit of claim 3, further comprising a tenth transistorcoupled to a terminal of each of the eighth and ninth transistors,wherein the tenth transistor is configured to be controlled by a thirdcontrol signal having an edge that is delayed from a corresponding edgeof the first control signal.
 5. The comparator circuit of claim 1,wherein the fourth and fifth transistors comprise n-type metal oxidesemiconductor field effect transistors and the eighth and ninthtransistors comprise p-type metal oxide semiconductor field effecttransistors.
 6. A comparator circuit, comprising: a first transistorconfigured to receive a first input; a second transistor configured toreceive a second input; a third transistor coupled to a terminal of eachof the first and second transistors, wherein the third transistor isconfigured to be controlled by a first control signal; a transistorswitch coupled between drains of the first and second transistors; afourth transistor including a gate and a drain; a fifth transistorincluding a gate and a drain, wherein the gate of the fifth transistoris coupled to the drain of the fourth transistor and the gate of thefourth transistor is coupled to the drain of the fifth transistor; asixth transistor including a drain and a gate, wherein the drains of thefourth and sixth transistors are coupled together, wherein a gate of thesixth transistor is coupled to the drain of the fifth transistor; aseventh transistor including a drain and a gate, wherein the drains ofthe fifth and seventh transistors are coupled together, and wherein agate of the seventh transistor is coupled to the drain of the fourthtransistor; and an eighth transistor coupled to a terminal of each ofthe sixth and seventh transistors, wherein the eighth transistor isconfigured to be controlled by a second control signal having an edgethat is delayed from a corresponding edge of the first control signal.7. The comparator circuit of claim 6, further comprising a ninthtransistor coupled between the first and fourth transistors and a tenthtransistor coupled between the second and fifth transistors.
 8. Thecomparator circuit of claim 7, wherein a gate of the ninth transistorand a gate of the tenth transistor are coupled together at a fixedvoltage level.
 9. A system comprising: an analog-to-digital converter(ADC), the ADC comprising; a comparator circuit, the comparator circuitcomprising: a first transistor configured to receive a first input; asecond transistor configured to receive a second input; a thirdtransistor coupled to a terminal of each of the first and secondtransistors, wherein the third transistor is configured to be controlledby a first control signal; a fourth transistor; a fifth transistor,wherein a gate of the fifth transistor is coupled to a terminal of thefourth transistor at a first node and a gate of the fourth transistor iscoupled to a terminal of the fifth transistor at a second node; and asixth transistor coupled between the first and fourth transistors; and aseventh transistor coupled between the second and fifth transistors;wherein a gate of the sixth transistor and a gate of the seventhtransistor are coupled together at a fixed voltage level.
 10. The systemof claim 9, wherein the first, second, sixth and seventh transistorscomprise p-type metal oxide semiconductor field effect transistors. 11.The system of claim 9, further comprising: an eighth transistor coupledto the first node, wherein a gate of the eighth transistor is coupled tothe second node; and a ninth transistor coupled to the second node,wherein a gate of the ninth transistor is coupled to the first node. 12.The system of claim 11, further comprising a tenth transistor coupled toa terminal of each of the eighth and ninth transistors, wherein thetenth transistor is configured to be controlled by a third controlsignal having an edge that is delayed from a corresponding edge of thefirst control signal.
 13. The system of claim 9, wherein the fourth andfifth transistors comprise n-type metal oxide semiconductor field effecttransistors and the eighth and ninth transistors comprise p-type metaloxide semiconductor field effect transistors.